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| Hyper TOPLED(R) White LED Vorlaufige Daten / Preliminary Data Besondere Merkmale * * * * * * * * GaN-Technologie Farbe: wei x = 0.30, y = 0.32 nach CIE1931 Abstrahlcharakteristik: Lambertscher Strahler (120) ESD-sicher bis 2 kV nach MIL STD 883D, Method 3015.7 JEDEC Level 2 weies SMT-Gehause Fur alle SMT-Bestuck- und Lottechniken geeignet Gegurtet in 8 mm-Filmgurt LW T676 Features * * * * * * * * GaN technology color: white x = 0.30, y = 0.32 according to CIE1931 viewing angle: Lambertian Emitter (120) ESD withstand voltage of 2 kV according to MIL STD 883D, Method 3015.7 JEDEC Level 2 white colored SMT package suitable for all SMT assembly and soldering methods available on 8 mm tape reels Anwendungen * * * * * * * * Innenbeleuchtungen und Hinterleuchtungen im Automobilbereich Anzeigen im Innen und Auenbereich LCD-Hinterleuchtungen Schalter-Hinterleuchtungen Batterie-Taschenlampen Notausgangsbeleuchtungen Leselampen Sehr gute Alternative zur Gluhlampe Applications * * * * * * * * illumunations and backlighting for interior automotive applications indoor and outdoor message boards LCD backlighting switch backlighting battery torches emergency exit illuminations lamps for reading purposes very good alternative to incandescent lamps Semiconductor Group 1 1998-11-05 VPL06724 LW T676 Typ Emissionsfarbe Color of Emission Type Farbe der Lichtaustrittsflache Color of the Light Emitting Area colored diffused Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 10 mA I V (mcd) 12.5 16.0 20.0 25.0 ... ... ... ... 20.0 25.0 32.0 40.0 Luminous Flux IF = 10 mA V (mlm) 50 (typ.) 60 (typ.) 80 (typ.) 100 (typ.)) Ordering Code LW T676 LW T676-L2 LW T676-M1 LW T676-M2 LW T676-N1 white Q62703-Q4450 Streuung der Lichtstarke in einer Verpackungseinheit I V max / I V min 1.6. Luminous intensity ratio in one packaging unit I V max / I V min 1.6. Helligkeitswerte werden bei einer Strompulsdauer von 25 ms spezifiziert. Luminous intensity is specified at a current pulse duration of 25 ms. Semiconductor Group 2 1998-11-05 LW T676 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Sperrspanung1) Reverse voltage1) Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) 1) 1) Symbol Symbol Werte Values - 40 ... + 100 - 40 ... + 100 + 100 20 5 90 Einheit Unit C C C mA V mW Top Tstg Tj IF VR Ptot Rth JA 500 K/W Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. *) PC-board: FR4 Semiconductor Group 3 1998-11-05 LW T676 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Farbkoordinate x nach CIE 1931 1) Chromaticity coordinate x acc. to CIE 1931 1) IF = 10 mA Farbkoordinate y nach CIE 1931 1) Chromaticity coordinate y acc. to CIE 1931 1) IF = 10 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Temperaturkoeffizient von x (IF = 10 mA) Temperature coefficient of x (IF = 10 mA) Temperaturkoeffizient von y (IF = 10 mA) Temperature coefficient of y (IF = 10 mA) Temperaturkoeffizient von VF (IF = 10 mA) Temperature coefficient of VF (IF = 10 mA) Symbol Symbol typ. x 0.300 Werte Values max. - - Einheit Unit y 0.320 - - 2 120 3.5 - 4.2 Grad deg. V VF IR 0.01 10 A TCx TCy TCV 0.07 0.25 - 3.1 - - - 10-3/K 10-3/K mV/K 1) Farbortgruppen Chromaticity coordinate groups x min. 0.280 0.285 0.295 0.270 max. 0.325 0.330 0.340 0.315 min. 0.300 0.330 0.345 0.285 y max. 0.350 0.380 0.395 0.335 Gruppe Group 1 2 3 4 Semiconductor Group 4 1998-11-05 LW T676 Relative spektrale Emission I rel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve 100 rel % 80 OHL00467 V 60 40 20 0 380 420 460 500 540 580 620 660 700 nm 740 Abstrahlcharakteristik Irel = f () Radiation characteristic 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 Semiconductor Group 5 1998-11-05 LW T676 Durchlastrom IF = f (VF) Forward current TA = 25 C 10 2 OHL00432 Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C V 10 1 OHL00469 F 5 V (10 mA) 10 0 10 1 5 5 10 -1 5 10 0 5 10 -2 5 10 -1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V 6.0 10 -3 -1 10 5 10 0 5 10 1 VF F mA 10 2 Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) 30 OHL00448 Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA V 1.2 1.0 OHL00442 F mA 25 V (25 C) 20 0.8 15 0.6 10 0.4 5 0.2 0 0 20 40 60 80 C 100 TA 0 -20 0 20 40 60 C TA 100 Semiconductor Group 6 1998-11-05 LW T676 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 3.0 2.6 2.3 2.1 2.1 1.7 0.1 (typ) 0.9 0.7 3.4 3.0 2.4 0.8 0.6 Cathode/Collector marking Approx. weight 0.03 g 1.1 0.5 0.18 0.6 0.12 0.4 Cathode/Collector GPL06724 Kathodenkennung: abgeschragte Ecke Cathode mark: bevelled edge Semiconductor Group 7 3.7 3.3 1998-11-05 |
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